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Investigation of Surface Layer Formation for Fluorinated Carbon Film Using Fourier Transform Infrared Spectrometry Analysis

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dc.contributor.authorSeong, Mi-Ryn-
dc.contributor.authorLee, Gye-Young-
dc.contributor.authorCho, Si-Hyeong-
dc.contributor.authorLim, Hyun-Woo-
dc.contributor.authorPark, Jin-Goo-
dc.contributor.authorLee, Caroline Sunyong-
dc.date.accessioned2021-06-23T17:06:49Z-
dc.date.available2021-06-23T17:06:49Z-
dc.date.issued2008-08-
dc.identifier.issn0021-4922-
dc.identifier.issn1347-4065-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/42262-
dc.description.abstractMechanism for fluorinated carbon film formation was investigated by varying pressure and substrate temperature to find the optimum deposition condition anti-stiction layer. The temperature and pressure were varied using design of experiment (DOE) method and C4F8 was used as a source gas in this study. Film was deposited by plasma-enhanced chemical vapor deposition (PECVD), and various properties of these films were measured, Such as contact angle, surface energy, and thickness. Moreover, this film was characterized using Fourier transform infrared spectrometry (FTIR). From FTIR analysis, an extra peak at low temperature was detected and it was identified to be CF2 which was not detected at 250 degrees C. It was found that more fluorine atoms decomposed at high temperature. Therefore, it was found that the decomposition of fluorine atoms at high temperature resulted the lowest thickness while at two lower temperatures, the strong chemical bond between Carbon and Fluorine atoms resulted thicker films.-
dc.format.extent5-
dc.language영어-
dc.language.isoENG-
dc.publisherIOP Publishing Ltd-
dc.titleInvestigation of Surface Layer Formation for Fluorinated Carbon Film Using Fourier Transform Infrared Spectrometry Analysis-
dc.typeArticle-
dc.publisher.location영국-
dc.identifier.doi10.1143/JJAP.47.6422-
dc.identifier.scopusid2-s2.0-55149118966-
dc.identifier.wosid000260003000053-
dc.identifier.bibliographicCitationJapanese Journal of Applied Physics, v.47, no.8, pp 6422 - 6426-
dc.citation.titleJapanese Journal of Applied Physics-
dc.citation.volume47-
dc.citation.number8-
dc.citation.startPage6422-
dc.citation.endPage6426-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusLOW-DIELECTRIC-CONSTANT-
dc.subject.keywordPlusC-F FILMS-
dc.subject.keywordPlusAMORPHOUS-CARBON-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordAuthoroctafluorocyclobutane (C4F8)-
dc.subject.keywordAuthorplasma enhanced chemical vapor deposition (PECVD)-
dc.subject.keywordAuthorfluorinated carbon (FC) film-
dc.subject.keywordAuthorFourier transform infrared spectrometer (FTIR)-
dc.subject.keywordAuthoranti-stiction layer-
dc.identifier.urlhttps://iopscience.iop.org/article/10.1143/JJAP.47.6422-
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