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Sensitivities of the InGaAs/InGaAsP/InGaAsP Intrastep Quantum Well to Thickness and Composition Variations for Realizing Efficient Electroabsorption Modulators
- Authors
- Kim, Kanabaek; Shin, Dong-Soo
- Issue Date
- Aug-2008
- Publisher
- IOP Publishing Ltd
- Keywords
- quantum well; step barrier; sensitivity; composition; thickness; variation
- Citation
- Japanese Journal of Applied Physics, v.47, no.8, pp.6361 - 6363
- Indexed
- SCIE
SCOPUS
- Journal Title
- Japanese Journal of Applied Physics
- Volume
- 47
- Number
- 8
- Start Page
- 6361
- End Page
- 6363
- ISSN
- 0021-4922
- Abstract
- We examine the sensitivities of the intrastep-quantum-well (IQW) structure with an InGaAs well to the thickness and composition variations. With the layer variations into account, we evaluate the changes in absorption coefficient as a function of electric field and the Subsequent transfer functions of the electroabsorption modulator. It is concluded that the examined IQW structure is rather sensitive to the thickness variation but is robust to the composition variation. This work suggests that the thickness control is very important in actually growing the IQW structure to obtain the desired performance with the IQW.
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Related Researcher
- Shin, Dong Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)