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Improved ESD voltage by inserting floating metal ring in GaN-based light emitting diodes

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dc.contributor.authorHwang, Sungwoo-
dc.contributor.authorShim, Jong In-
dc.date.accessioned2021-06-23T17:41:06Z-
dc.date.available2021-06-23T17:41:06Z-
dc.date.issued2008-04-
dc.identifier.issn0013-5194-
dc.identifier.issn1350-911X-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/42538-
dc.description.abstractImprovement of the electrostatic discharge (ESD) voltage in an InGaN/GaN blue light emitting diode (LED) grown on sapphire substrate is presented by inserting floating metal near the n-electrode. ESD voltages about four times larger than previously observed are experimentally obtained for LEDs with floating metal compared to those without.-
dc.format.extent2-
dc.language영어-
dc.language.isoENG-
dc.publisherInstitute of Electrical Engineers-
dc.titleImproved ESD voltage by inserting floating metal ring in GaN-based light emitting diodes-
dc.typeArticle-
dc.publisher.location영국-
dc.identifier.doi10.1049/el:20080217-
dc.identifier.scopusid2-s2.0-42449154997-
dc.identifier.wosid000255683800020-
dc.identifier.bibliographicCitationElectronics Letters, v.44, no.9, pp 590 - 591-
dc.citation.titleElectronics Letters-
dc.citation.volume44-
dc.citation.number9-
dc.citation.startPage590-
dc.citation.endPage591-
dc.type.docTypeArticle-
dc.description.isOpenAccessY-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusVERTICAL CHIP-
dc.subject.keywordAuthorVERTICAL CHIP-
dc.subject.keywordAuthorLEDS-
dc.identifier.urlhttps://digital-library.theiet.org/content/journals/10.1049/el_20080217-
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