Strain relaxation in sol-gel grown epitaxial anatase thin films
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Hyun Suk | - |
dc.contributor.author | Lee, Jung-Kun | - |
dc.contributor.author | Lee, Jaegab | - |
dc.contributor.author | Kang, Bo Soo | - |
dc.contributor.author | Jia, Quanxi | - |
dc.contributor.author | Nastasi, Michael | - |
dc.date.accessioned | 2021-06-23T18:02:04Z | - |
dc.date.available | 2021-06-23T18:02:04Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2008-03 | - |
dc.identifier.issn | 1932-7447 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/42596 | - |
dc.description.abstract | Anatase TiO2 thin films on LaAlO3 (LAO) substrates were epitaxially grown at a temperature as low as 350 degrees C using a simple sol-gel process. X-ray diffraction and high-resolution transmission electron microscopy showed that the anatase films have the epitaxial relationship of (001)(TiO2)parallel to(001)(LaAlO3). While the low-temperature growth of the anatase film yielded a residual strain, subsequent annealing at higher temperatures can remove the strain and recover the lattice parameters of a perfect anatase crystal. Measurements of the oxygen content in the anatase films by non-Rutherford elastic resonance scattering analysis suggest that the strain relaxation during higher temperature annealing is due to the incorporation of oxygen and the concomitant annihilation of oxygen vacancies. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Strain relaxation in sol-gel grown epitaxial anatase thin films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kang, Bo Soo | - |
dc.identifier.doi | 10.1021/jp076194n | - |
dc.identifier.scopusid | 2-s2.0-42449136277 | - |
dc.identifier.wosid | 000253946200031 | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICAL CHEMISTRY C, v.112, no.11, pp.4205 - 4208 | - |
dc.relation.isPartOf | JOURNAL OF PHYSICAL CHEMISTRY C | - |
dc.citation.title | JOURNAL OF PHYSICAL CHEMISTRY C | - |
dc.citation.volume | 112 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 4205 | - |
dc.citation.endPage | 4208 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | TIO2 FILMS | - |
dc.subject.keywordPlus | LOW-COST | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | LAALO3 | - |
dc.subject.keywordPlus | MICROSTRUCTURE | - |
dc.subject.keywordPlus | INTERFACES | - |
dc.subject.keywordPlus | OXIDES | - |
dc.subject.keywordAuthor | TIO2 FILMS | - |
dc.subject.keywordAuthor | LOW-COST | - |
dc.subject.keywordAuthor | LAALO3 | - |
dc.subject.keywordAuthor | SUBSTRATE | - |
dc.subject.keywordAuthor | MICROSTRUCTURE | - |
dc.subject.keywordAuthor | MICROSCOPY | - |
dc.subject.keywordAuthor | INTERFACES | - |
dc.subject.keywordAuthor | DEPOSITION | - |
dc.subject.keywordAuthor | STRESS | - |
dc.subject.keywordAuthor | OXIDES | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/jp076194n | - |
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