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Write current reduction in transition metal oxide based resistance-change memory

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dc.contributor.authorAhn, Seung-Eon-
dc.contributor.authorLee, Myoung-Jae-
dc.contributor.authorPark, Youngsoo-
dc.contributor.authorKang, Bo Soo-
dc.contributor.authorLee, Chang Bum-
dc.contributor.authorKim, Ki Hwan-
dc.contributor.authorSeo, Sunae-
dc.contributor.authorSuh, Dong-Seok-
dc.contributor.authorKim, Dong-Chirl-
dc.contributor.authorHur, Jihyun-
dc.contributor.authorXianyu, Wenxu-
dc.contributor.authorStefanovich, Genrikh-
dc.contributor.authorYin, Hit. Axiang-
dc.contributor.authorYoo, In-Kyeong-
dc.contributor.authorLee, Jung-Hyun-
dc.contributor.authorPark, Jong-Bong-
dc.contributor.authorBaek, In-Gyu-
dc.contributor.authorPark, Bae Ho-
dc.date.accessioned2021-06-23T18:02:11Z-
dc.date.available2021-06-23T18:02:11Z-
dc.date.issued2008-03-
dc.identifier.issn0935-9648-
dc.identifier.issn1521-4095-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/42600-
dc.description.abstractA novel memory cell structure with a Pt/Ti-doped NiO/Pt architecture is shown to exhibit the lowest write current reported thus far for a unipolar switching resistance-change-based device, as shown in the figure. The write current decreases dramatically upon scaling to cell sizes smaller than 100 nm x 100 nm. High-density universal memory can be fabricated by combining this node element with a selective switch.-
dc.format.extent5-
dc.language영어-
dc.language.isoENG-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.titleWrite current reduction in transition metal oxide based resistance-change memory-
dc.typeArticle-
dc.publisher.location독일-
dc.identifier.doi10.1002/adma.200702081-
dc.identifier.scopusid2-s2.0-54949089222-
dc.identifier.wosid000254181900009-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.20, no.5, pp 924 - 928-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume20-
dc.citation.number5-
dc.citation.startPage924-
dc.citation.endPage928-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusPOLARIZATION-
dc.subject.keywordAuthorFILMS-
dc.subject.keywordAuthorPERMITTIVITY-
dc.subject.keywordAuthorPOLARIZATION-
dc.subject.keywordAuthorSRTIO3-
dc.subject.keywordAuthorMRAM-
dc.identifier.urlhttps://onlinelibrary.wiley.com/doi/10.1002/adma.200702081-
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