Write current reduction in transition metal oxide based resistance-change memory
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, Seung-Eon | - |
dc.contributor.author | Lee, Myoung-Jae | - |
dc.contributor.author | Park, Youngsoo | - |
dc.contributor.author | Kang, Bo Soo | - |
dc.contributor.author | Lee, Chang Bum | - |
dc.contributor.author | Kim, Ki Hwan | - |
dc.contributor.author | Seo, Sunae | - |
dc.contributor.author | Suh, Dong-Seok | - |
dc.contributor.author | Kim, Dong-Chirl | - |
dc.contributor.author | Hur, Jihyun | - |
dc.contributor.author | Xianyu, Wenxu | - |
dc.contributor.author | Stefanovich, Genrikh | - |
dc.contributor.author | Yin, Hit. Axiang | - |
dc.contributor.author | Yoo, In-Kyeong | - |
dc.contributor.author | Lee, Jung-Hyun | - |
dc.contributor.author | Park, Jong-Bong | - |
dc.contributor.author | Baek, In-Gyu | - |
dc.contributor.author | Park, Bae Ho | - |
dc.date.accessioned | 2021-06-23T18:02:11Z | - |
dc.date.available | 2021-06-23T18:02:11Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2008-03 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/42600 | - |
dc.description.abstract | A novel memory cell structure with a Pt/Ti-doped NiO/Pt architecture is shown to exhibit the lowest write current reported thus far for a unipolar switching resistance-change-based device, as shown in the figure. The write current decreases dramatically upon scaling to cell sizes smaller than 100 nm x 100 nm. High-density universal memory can be fabricated by combining this node element with a selective switch. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Write current reduction in transition metal oxide based resistance-change memory | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kang, Bo Soo | - |
dc.identifier.doi | 10.1002/adma.200702081 | - |
dc.identifier.scopusid | 2-s2.0-54949089222 | - |
dc.identifier.wosid | 000254181900009 | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.20, no.5, pp.924 - 928 | - |
dc.relation.isPartOf | ADVANCED MATERIALS | - |
dc.citation.title | ADVANCED MATERIALS | - |
dc.citation.volume | 20 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 924 | - |
dc.citation.endPage | 928 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | POLARIZATION | - |
dc.subject.keywordAuthor | FILMS | - |
dc.subject.keywordAuthor | PERMITTIVITY | - |
dc.subject.keywordAuthor | POLARIZATION | - |
dc.subject.keywordAuthor | SRTIO3 | - |
dc.subject.keywordAuthor | MRAM | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/adma.200702081 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.