ICP-RIE 기술을 이용한 차압형 가스유량센서 제작Fabrication of a Pressure Difference Type Gas Flow Sensor using ICP-RIE Technology
- Other Titles
- Fabrication of a Pressure Difference Type Gas Flow Sensor using ICP-RIE Technology
- Authors
- 이영태; 안강호; 권용택; Hidekuni Takao; Makoto Ishida
- Issue Date
- Mar-2008
- Publisher
- 한국반도체디스플레이기술학회
- Keywords
- Flow sensor; Diaphragm; Orifice; Piezoresistor; Deep RIE; SOI; Etch-stop; Flow sensor; Diaphragm; Orifice; Piezoresistor; Deep RIE; SOI; Etch-stop
- Citation
- 반도체디스플레이기술학회지, v.7, no.1, pp.1 - 5
- Indexed
- KCI
OTHER
- Journal Title
- 반도체디스플레이기술학회지
- Volume
- 7
- Number
- 1
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/42979
- ISSN
- 1738-2270
- Abstract
- In this paper, we fabricated pressure difference type gas flow sensor using only dry etching technology by ICP-RIE(inductive coupled plasma reactive ion etching). The sensors structure consists of a common shear stress type piezoresistive pressure sensor with an orifice fabricated in the middle of the sensor diaphragm. Generally, structure like diaphragm is fabricated by wet etching technology using TMAH, but we fabricated diaphragm by only dry etching using ICP-RIE. To equalize the thickness of diaphragm we applied insulator(SiO₂) layer of SOI(Si/SiO₂/Si-sub) wafer as delay layer of dry etching. Size of fabricated diaphragm is 100010007㎛³ and overall chip 3000×3000㎛². We measured the variation of output voltage toward the change of gas pressure to analyze characteristics of the fabricated sensor. Sensitivity of fabricated sensor was relatively high as about 1.5mV/V·kPa at 1kPa full-scale. Nonlinearity was below 0.5%F.S. Over-pressure range of the fabricated sensor is 100kPa or more.
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Collections - COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MECHANICAL ENGINEERING > 1. Journal Articles
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