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Two series oxide resistors applicable to high speed and high density nonvolatile memory
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Myoung-Jae | - |
| dc.contributor.author | Park, Youngsoo | - |
| dc.contributor.author | Suh, Dong-Seok | - |
| dc.contributor.author | Lee, Eun-Hong | - |
| dc.contributor.author | Seo, Sunae | - |
| dc.contributor.author | Kim, Dong-Chirl | - |
| dc.contributor.author | Jung, Ranju | - |
| dc.contributor.author | Kang, Bo-Soo | - |
| dc.contributor.author | Ahn, Seung-Eon | - |
| dc.contributor.author | Lee, Chang Bum | - |
| dc.contributor.author | Seo, David H. | - |
| dc.contributor.author | Cha, Young-Kwan | - |
| dc.contributor.author | Yoo, In-Kyeong | - |
| dc.contributor.author | Kim, Jin-Soo | - |
| dc.contributor.author | Park, Bae Ho | - |
| dc.date.accessioned | 2021-06-23T19:02:26Z | - |
| dc.date.available | 2021-06-23T19:02:26Z | - |
| dc.date.created | 2021-01-21 | - |
| dc.date.issued | 2007-11 | - |
| dc.identifier.issn | 0935-9648 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/43218 | - |
| dc.description.abstract | A memory cell consisting of a Pt/VO2/ Pt switch element and a Pt/NiO/Pt memory element connected in series. By applying a voltage higher than V-th of 0.6 V, the switch element reaches the on state and the cell can be accessed. Since reset and set voltages are higher than V-th, information can be written by simply applying an appropriate voltage to a selected cell. By applying a voltage lower than V-th to the other cells, we can keep the other cells in the off state and prevent interference between the selected cell and the others. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | WILEY-V C H VERLAG GMBH | - |
| dc.title | Two series oxide resistors applicable to high speed and high density nonvolatile memory | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kang, Bo-Soo | - |
| dc.identifier.doi | 10.1002/adma.200700251 | - |
| dc.identifier.scopusid | 2-s2.0-36549083365 | - |
| dc.identifier.wosid | 000251383900028 | - |
| dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.19, no.22, pp.3919 - 3923 | - |
| dc.relation.isPartOf | ADVANCED MATERIALS | - |
| dc.citation.title | ADVANCED MATERIALS | - |
| dc.citation.volume | 19 | - |
| dc.citation.number | 22 | - |
| dc.citation.startPage | 3919 | - |
| dc.citation.endPage | 3923 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordPlus | METAL-INSULATOR-TRANSITION | - |
| dc.subject.keywordAuthor | METAL-INSULATOR-TRANSITION | - |
| dc.subject.keywordAuthor | THIN-FILMS | - |
| dc.subject.keywordAuthor | NIO FILMS | - |
| dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/adma.200700251 | - |
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Related Researcher
- Kang, Bo Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)