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High-performance blue InGaN laser diodes with single-quantum-well active layers

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dc.contributor.authorRyu, Hanyoul-
dc.contributor.authorHa, Kyoungho-
dc.contributor.authorLee, Sung-nam-
dc.contributor.authorJang, Taehoon-
dc.contributor.authorSon, Joongkon-
dc.contributor.authorPaek, Hosun-
dc.contributor.authorSung, Younjoon-
dc.contributor.authorKim, Hyungkun-
dc.contributor.authorKim, Kyusang-
dc.contributor.authorNam, Okhyun-
dc.contributor.authorPark, Yongjo-
dc.contributor.authorShim, Jongin-
dc.date.accessioned2021-06-23T19:04:02Z-
dc.date.available2021-06-23T19:04:02Z-
dc.date.created2021-01-21-
dc.date.issued2007-11-
dc.identifier.issn1041-1135-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/43320-
dc.description.abstractThe authors report on the high-performance blue laser diodes (LDs) with an emission wavelength of similar to 448 mn employing InGaN single-quantum-well (QW) active layers. At 100-mW continuous-wave (CW) output power, operation current and voltage are, respectively, 150 mA and 5.3 V, corresponding to the wall plug efficiency of > 12%, a record value for the single-mode InGaN LDs with blue wavelengths. The single QW blue LD showed normal temperature dependence of light output-current curves with the characteristic temperature of 170 K. In addition, we demonstrate a high level of catastrophic optical damage of > 300 mW and long device lifetime under CW operation condition at room temperature.-
dc.language영어-
dc.language.isoen-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.titleHigh-performance blue InGaN laser diodes with single-quantum-well active layers-
dc.typeArticle-
dc.contributor.affiliatedAuthorShim, Jongin-
dc.identifier.doi10.1109/LPT.2007.905215-
dc.identifier.scopusid2-s2.0-35348972407-
dc.identifier.wosid000251701000007-
dc.identifier.bibliographicCitationIEEE Photonics Technology Letters, v.19, no.21-24, pp.1717 - 1719-
dc.relation.isPartOfIEEE Photonics Technology Letters-
dc.citation.titleIEEE Photonics Technology Letters-
dc.citation.volume19-
dc.citation.number21-24-
dc.citation.startPage1717-
dc.citation.endPage1719-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaOptics-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryOptics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusRECENT PROGRESS-
dc.subject.keywordAuthorblue laser-
dc.subject.keywordAuthor(In)GaN-
dc.subject.keywordAuthorlaser diode (LD)-
dc.subject.keywordAuthorsingle quantum well (QW)-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/4343133-
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