Direct growth of carbon nanotubes on a conical tip as a micro-focused x-ray generation source: Effects of various composition ratios of co-sputtered Ni and Co catalysts
DC Field | Value | Language |
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dc.contributor.author | Kim, Jong pil | - |
dc.contributor.author | Park, Chang kyun | - |
dc.contributor.author | Yun, Sung jun | - |
dc.contributor.author | Kim, Won | - |
dc.contributor.author | Kim, Young kwang | - |
dc.contributor.author | Park, Jin-Seok | - |
dc.date.accessioned | 2021-06-23T19:37:54Z | - |
dc.date.available | 2021-06-23T19:37:54Z | - |
dc.date.created | 2021-02-18 | - |
dc.date.issued | 2007-07 | - |
dc.identifier.issn | 2164-2370 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/43550 | - |
dc.description.abstract | In this study, we first present the experimental results that regard the direct growth of CNTs on a conical-type tungsten (W) tip and their electron emission properties, in terms of the catalyst materials such as a nickel (Ni) and a cobalt (Co) as well as their composition ratios. Sharpening of W-tips was done by electrochemical etch and their diameters were controlled to range from 5 mum down to sub-mum. The co-sputtering method using Ni and Co targets was used to deposit the catalyst layers with various composition ratios of Ni and Co metals. The composition ratio of the co-sputtered catalysts was evaluated by using an energy dispersive X-ray spectroscopy (EDS, Oxford). CNTs were grown by inductively coupled plasma-chemical vapor deposition (ICP-CVD). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE | - |
dc.title | Direct growth of carbon nanotubes on a conical tip as a micro-focused x-ray generation source: Effects of various composition ratios of co-sputtered Ni and Co catalysts | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seok | - |
dc.identifier.doi | 10.1109/IVNC.2007.4480987 | - |
dc.identifier.scopusid | 2-s2.0-50249085896 | - |
dc.identifier.wosid | 000258094500083 | - |
dc.identifier.bibliographicCitation | International Vacuum Nanoelectronics Conference, pp.185 - 186 | - |
dc.relation.isPartOf | International Vacuum Nanoelectronics Conference | - |
dc.citation.title | International Vacuum Nanoelectronics Conference | - |
dc.citation.startPage | 185 | - |
dc.citation.endPage | 186 | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/4480987 | - |
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