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NBTI가 발생한 SRAM CELL의 Ground Bounce 영향 분석
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최태원 | - |
| dc.contributor.author | 백상현 | - |
| dc.date.accessioned | 2021-06-23T19:39:02Z | - |
| dc.date.available | 2021-06-23T19:39:02Z | - |
| dc.date.issued | 2007-06 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/43620 | - |
| dc.description.abstract | This paper presents noble insights of the combined effects of NBTI (Negative Bias Temperature Insta-bility) and ground bounce in SRAM cells. Experi-mental results shows that the performance degra-dation of SRAM cells by NBTI impacts can be pos-sibly reduced by the ground bounce by the parasitic inductance on power signals. | - |
| dc.format.extent | 3 | - |
| dc.language | 한국어 | - |
| dc.language.iso | KOR | - |
| dc.publisher | 한국테스트협회 | - |
| dc.title | NBTI가 발생한 SRAM CELL의 Ground Bounce 영향 분석 | - |
| dc.title.alternative | Ground Bounce Analysis in Impact of NBTI on SRAM Cell | - |
| dc.type | Article | - |
| dc.publisher.location | 대한민국 | - |
| dc.identifier.bibliographicCitation | 한국테스트협회논문집, pp 1 - 3 | - |
| dc.citation.title | 한국테스트협회논문집 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 3 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | domestic | - |
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Related Researcher
- Baeg, Sanghyeon
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)