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NBTI가 발생한 SRAM CELL의 Ground Bounce 영향 분석Ground Bounce Analysis in Impact of NBTI on SRAM Cell
- Other Titles
- Ground Bounce Analysis in Impact of NBTI on SRAM Cell
- Issue Date
- Jun-2007
- Publisher
- 한국테스트협회
- Citation
- 한국테스트협회논문집, pp 1 - 3
- Pages
- 3
- Indexed
- DOMESTIC
- Journal Title
- 한국테스트협회논문집
- Start Page
- 1
- End Page
- 3
- Abstract
- This paper presents noble insights of the combined effects of NBTI (Negative Bias Temperature Insta-bility) and ground bounce in SRAM cells. Experi-mental results shows that the performance degra-dation of SRAM cells by NBTI impacts can be pos-sibly reduced by the ground bounce by the parasitic inductance on power signals.
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Related Researcher
- Baeg, Sanghyeon
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)