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Theoretical investigation of pattern printability of oxidized Si and Ru capping models for extreme ultraviolet lithography (EUVL)

Authors
Kang, In-YongAhn, JinhoKim, Chung YongOh, Hye-KeunChung, Yong-Chae
Issue Date
May-2007
Publisher
Elsevier BV
Keywords
EUVL; capping layer; oxidation; Ru/Mo/Si; rellectivity; aerial image intensity
Citation
Microelectronic Engineering, v.84, no.5-8, pp 1023 - 1026
Pages
4
Indexed
SCIE
SCOPUS
Journal Title
Microelectronic Engineering
Volume
84
Number
5-8
Start Page
1023
End Page
1026
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/43755
DOI
10.1016/j.mee.2007.01.019
ISSN
0167-9317
1873-5568
Abstract
The optical performance of potential capping materials, Ru and Si, were quantitatively investigated by simulating the reflectivity on a mask and aerial image intensity transferred through the system. The refiectivity on the capping surface was calculated according to the capping thickness variation by using the Fresnel equation. For the calculation of the aerial image intensity, SOLID-EUV, which is capable of rigorous electromagnetic-field computation, was employed. Through the investigation of pattern image characteristics for partially oxidized capping models, the Ru capping model turned out to show a higher EUV reflectivity, smaller line variation, and a higher oxidation sensitivity compared to the case of the Si capping model. It could be reasonably concluded that Ru can be proposed as a potential capping material for achieving a better optical performance considering the experimentally proven high oxidation stability of the Ru capping model. (c) 2007 Elsevier B.V. All rights reserved.
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