Comparison of Quantum Wells based on InGaAs(P)/InP and InGa(Al)As/InAlAs Material Systems in View of Carrier Escape Times for High-Saturation-Optical-Power Electroabsorption Modulators
- Authors
- 김강백; 신동수
- Issue Date
- Sep-2007
- Publisher
- 한국광학회
- Citation
- Current Optics and Photonics, v.11, no.3, pp.133 - 137
- Indexed
- KCI
- Journal Title
- Current Optics and Photonics
- Volume
- 11
- Number
- 3
- Start Page
- 133
- End Page
- 137
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/44043
- DOI
- 10.3807/JOSK.2007.11.3.133
- ISSN
- 2508-7266
- Abstract
- We compare electroabsorption modulators (EAMs) with multiple quantum wells (MQWs) based on InGaAs(P)/InP and InGa(Al)As/InAlAs material systems. We carefully choose the quantum-well structures so that the structures based on different material systems have similar band-offset energies and excition-peak wavelengths. Assuming the same light wavelength of 1.55μm, we show the transfer functions of EAMs with each quantum-well structure and calculate the escape times of photogenerated charge carriers. As the heavy-hole escape time of the quantum well based on InGaAs(P)/InP is much longer than those of photogenerated charge carriers of InGa(Al)As/InAlAs, the EAM based on the InGa(Al)As/InAlAs material seems to be more suitable for high-optical-power operation.
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