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A new method for measurement of the fundamental device parameters in a GaN-based light emitting diode
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Hyunsung | - |
| dc.contributor.author | Shim, Jong In | - |
| dc.date.accessioned | 2021-06-23T20:40:04Z | - |
| dc.date.available | 2021-06-23T20:40:04Z | - |
| dc.date.created | 2021-02-01 | - |
| dc.date.issued | 2007-08 | - |
| dc.identifier.issn | 2162-2701 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/44221 | - |
| dc.description.abstract | We propose a simple and new method which is able to characterize internal device parameters such as the internal quantum efficiency, nonradiative recombination rate, radiative recombination rate, and the internal carrier density in a light emitting diode. The method utilizes measurements of both the power versus current curve and the carrier lifetime. © 2011 OSA. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.title | A new method for measurement of the fundamental device parameters in a GaN-based light emitting diode | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Shim, Jong In | - |
| dc.identifier.doi | 10.1109/CLEOPR.2007.4391579 | - |
| dc.identifier.scopusid | 2-s2.0-84899075461 | - |
| dc.identifier.bibliographicCitation | Optics InfoBase Conference Papers, pp. 1 - 2 | - |
| dc.relation.isPartOf | Optics InfoBase Conference Papers | - |
| dc.citation.title | Optics InfoBase Conference Papers | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 2 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Conference Paper | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Optics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | Light emitting diodes | - |
| dc.subject.keywordPlus | Current curve | - |
| dc.subject.keywordPlus | Device parameters | - |
| dc.subject.keywordPlus | Internal quantum efficiency | - |
| dc.subject.keywordPlus | Measurements of | - |
| dc.subject.keywordPlus | Nonradiative recombination rates | - |
| dc.subject.keywordPlus | Radiative recombination rate | - |
| dc.subject.keywordPlus | Parameter estimation | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/4391579 | - |
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)