Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Anisotropic resist reflow process simulation for 32 nm node elongated contact holes
- Issue Date
- Nov-2007
- Publisher
- IEEE
- Keywords
- 32 nm pattern; Elongated contact hole; Optical proximity correction; Resist reflow process
- Citation
- Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC, pp.90 - 91
- Indexed
- SCOPUS
- Journal Title
- Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC
- Start Page
- 90
- End Page
- 91
- Abstract
- In general, it is very hard to correctly predict the elongated contact hole resist reflow process ( CH RRP) due to position shift and pattern size irregularity of RRP, because simple RRP simulator uses isotropic resist flow. Therefore RRP simulator was upgraded which can correctly predict the elongated CH RRP by adding the bulk effect and anisotropic reflow. Optical proximity correction for 32 nm node was also applied to the elongated CH RRP to correctly predict the anisotropic elongated CH. The experimental and simulated CH patterns after RRP were compared and found that the simulator can correctly predict the behavior of complex CH array after RRP.
- Files in This Item
- Go to Link
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Kim, Dai-Gyoung
- ERICA 과학기술융합대학 (ERICA 수리데이터사이언스학과)