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Observation of V-shaped defects in the growth of In0.8Al0.2Sb/InSb layers: Temperature and V/III flux ratio dependences
- Authors
- Kim, Y. H.; Lee, J. Y.; Noh, Y. G.; Kim, M. D.; Kwon, Y. J.; Oh, J. E.
- Issue Date
- Oct-2006
- Publisher
- ELSEVIER
- Keywords
- defects; molecular beam epitaxy; antimonide; semiconducting III-V materials
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.296, no.1, pp 75 - 80
- Pages
- 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 296
- Number
- 1
- Start Page
- 75
- End Page
- 80
- ISSN
- 0022-0248
1873-5002
- Abstract
- In0.8Al0.2Sb/InSb layers were grown under various growth temperature and V/III flux ratio conditions on semi-insulating (001)oriented GaAs substrates by molecular beam epitaxy. The crystalline qualities of In0.8Al0.2Sb/InSb layers were improved by decreasing the V/III flux ratio at a fixed temperature (380 degrees C) and increasing the growth temperature of the fixed V/III ratio (6). Dislocations were only observed in the In0.8Al0.2Sb/InSb layers grown at the optimal condition. On the other hand, many planar defects, including microtwins, were observed when the In0.8Al0.2Sb/InSb layers were grown in the Sb-rich condition. Specifically, V-shaped defects drawn boundaries in the microtwins were observed in the In0.8Al0.2Sb/InSb layer. (c) 2006 Elsevier B.V. All rights reserved.
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