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Deep RIE(reactive ion etching)를 이용한 가스 유량센서 제작

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dc.contributor.author이영태-
dc.contributor.author안강호-
dc.contributor.author권용택-
dc.contributor.authorHidekuni Takao-
dc.contributor.authorMakoto Ishida-
dc.date.accessioned2021-06-23T21:05:47Z-
dc.date.available2021-06-23T21:05:47Z-
dc.date.created2021-02-18-
dc.date.issued2006-10-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/44609-
dc.description.abstractIn this paper, we fabricated drag force type and pressure difference type gas flow sensor with dry etching technology which used Deep RIE(reactive ion etching) and etching stop technology which used SOI(silicon-on-insulator). we fabricated four kinds of sensor, which are cantilever, paddle type, diaphragm, and diaphragm with orifice type. Both cantilever and paddle type flow sensors have similar sensitivity as 0.03mV/V kPa. Sensitivity of the fabricated diaphragm and diaphragm with orifice type sensor were relatively high as about 3.5mV/V kPa, 1.5mV/V kPa respectively.-
dc.language한국어-
dc.language.isoko-
dc.publisher한국반도체디스플레이기술학회-
dc.titleDeep RIE(reactive ion etching)를 이용한 가스 유량센서 제작-
dc.typeArticle-
dc.contributor.affiliatedAuthor안강호-
dc.identifier.bibliographicCitation한국반도체및디스플레이장비학회 학술대회논문집-
dc.relation.isPartOf한국반도체및디스플레이장비학회 학술대회논문집-
dc.citation.title한국반도체및디스플레이장비학회 학술대회논문집-
dc.type.rimsART-
dc.description.journalClass3-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassother-
dc.identifier.urlhttp://koreascience.or.kr/article/CFKO200625522706862.page?&lang=ko-
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COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MECHANICAL ENGINEERING > 1. Journal Articles

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