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Deep RIE(reactive ion etching)를 이용한 가스 유량센서 제작

Authors
이영태안강호권용택Hidekuni TakaoMakoto Ishida
Issue Date
Oct-2006
Publisher
한국반도체디스플레이기술학회
Citation
한국반도체및디스플레이장비학회 학술대회논문집
Indexed
OTHER
Journal Title
한국반도체및디스플레이장비학회 학술대회논문집
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/44609
Abstract
In this paper, we fabricated drag force type and pressure difference type gas flow sensor with dry etching technology which used Deep RIE(reactive ion etching) and etching stop technology which used SOI(silicon-on-insulator). we fabricated four kinds of sensor, which are cantilever, paddle type, diaphragm, and diaphragm with orifice type. Both cantilever and paddle type flow sensors have similar sensitivity as 0.03mV/V kPa. Sensitivity of the fabricated diaphragm and diaphragm with orifice type sensor were relatively high as about 3.5mV/V kPa, 1.5mV/V kPa respectively.
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COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MECHANICAL ENGINEERING > 1. Journal Articles

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