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Dielectric properties of < 001 >-oriented Ba0.6Sr0.4TiO3 thin films on polycrystalline metal tapes using biaxially oriented MgO/gamma-Al2O3 buffer layers

Authors
Choi, WKang, BSJia, QXMatias, VFindikoglu, AT
Issue Date
Feb-2006
Publisher
AMER INST PHYSICS
Keywords
BARIUM STRONTIUM-TITANATE; COATED CONDUCTORS; MGO; TEMPLATES
Citation
APPLIED PHYSICS LETTERS, v.88, no.6, pp.1 - 4
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
88
Number
6
Start Page
1
End Page
4
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/45032
DOI
10.1063/1.2173232
ISSN
0003-6951
Abstract
We report the growth of < 001 >-oriented Ba0.6Sr0.4TiO3 (BST) thin films on polycrystalline Ni-alloy tapes by pulsed laser deposition using biaxially oriented, ion-beam-assisted deposited (IBAD) MgO and gamma-Al2O3 buffer layers. Dielectric constant values of our BST films were up to similar to 85% of those in the epitaxial films prepared under similar conditions on single-crystal MgO substrates. No significant dispersion of the dielectric constant was observed for frequencies from 100 Hz to 1 MHz. These results demonstrate the versatility of using IBAD-textured MgO and gamma-Al2O3 buffer layers to integrate highly oriented good-quality BST films with nonsingle-crystalline substrates.
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