Simulator for resist-reflow process by boundary movement
- Authors
- Kim, SK; Oh, HK
- Issue Date
- Nov-2005
- Publisher
- 한국물리학회
- Keywords
- lithography; lithography simulation; chemically amplified resist; thermal resist flow
- Citation
- Journal of the Korean Physical Society, v.47, pp S377 - S380
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 47
- Start Page
- S377
- End Page
- S380
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/45626
- ISSN
- 0374-4884
1976-8524
- Abstract
- The thermal-reflow process is one of many processes used for pattern shrinkage and resolution-enhancement technology. In this study, resist-flow behavior and contact-hole shrinkage are described by using the thermal-reflow length of the boundary-movement method and analysis of the image process. For the boundary-movement method, the viscosity variable is extracted from the experimental data by using a proposed equation. The simulation results of the boundary-movement method agree well with the experimental results in both contact-hole sizes and vertical-wall profile according to the baking temperature and time. The most controllable process and parameter for the critical dimension in thermal reflow are the development process and the inhibition reaction order of the enhanced Mack model.
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Collections - COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF APPLIED PHYSICS > 1. Journal Articles
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