Transport experiments on InAs self-assembled quantum dots in the microwave regime

Abstract

We report an experimental study on microwave (MW) transport through InAs self-assembled quantum dots (SAQDs) embedded in a Au/GaAs Schottky diode. In the dc measurement, we observed isolated conductance peaks resulting from the resonant tunneling through the quantum states of the SAQDs. A single peak split into two peaks when MW signals were added. The relative strengths of these split conductance peaks changed with frequency, and it was explained by a simple convolution model including nonadiabatic electron tunneling. The inverse tunneling rate was obtained from the degree of this nonadiabacity at high frequencies.