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Oxide CMP 과정에 대한 수치 유동 해석Numerical Study on Polishing Behavior During Oxide CMP
- Other Titles
- Numerical Study on Polishing Behavior During Oxide CMP
- Issue Date
- Apr-2005
- Publisher
- 대한기계학회
- Keywords
- 기계적 화학적 연마; 슬러리; 그루브; 패드; 전산유체역학; CMP; Slurry; Groove; Pad; CFD
- Citation
- 대한기계학회논문집 B, v.29, no.4, pp 435 - 440
- Pages
- 6
- Indexed
- KCI
- Journal Title
- 대한기계학회논문집 B
- Volume
- 29
- Number
- 4
- Start Page
- 435
- End Page
- 440
- ISSN
- 1226-4881
- Abstract
- In this paper, slurry fluid motion, abrasive particle motion, and roles of groove patterns on the pads are numerically investigated in the 2D and 3D geometries. The simulation results are analyzed in terms of experimental removal rate and WIWNU (Within Wafer Non-Uniformity) for ILD (Inter Level Dielectric) CMP process. Numerical investigations reveal that the grooves in the pad behave as uniform distributor of abrasive particles and enhance the removal rate by increasing shear stress. Higher removal rate and desirable uniformity are numerically and experimentally observed at the pad with grooves. Numerical analysis is very well matched with experimental results and helpful for understanding polishing mechanism and local physics.
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Related Researcher
- Lee, Do hyung
- ERICA 공학대학 (DEPARTMENT OF MECHANICAL ENGINEERING)