Pulsed current-voltage-temperature characteristics of AlGaN/GaN high electron mobility transistor under isothermal conditions
- Authors
- Her, Jin cherl; Lee, Kang min; Lee, Seung chul; Lee, Jae hak; Oh, Jae eung; Han, Min koo; Seo, Kwang seok
- Issue Date
- Apr-2005
- Publisher
- JAPAN SOC APPLIED PHYSICS
- Keywords
- gallium nitride; high electron mobility transistor; pulsed current-voltage measurement; current collapse
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.44, no.4B, pp.2726 - 2728
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
- Volume
- 44
- Number
- 4B
- Start Page
- 2726
- End Page
- 2728
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46031
- DOI
- 10.1143/JJAP.44.2726
- ISSN
- 0021-4922
- Abstract
- AlGaN/GaN high electron mobility transistors (HEMTs) have great potential, because of the material advantages. However, there are still some problems with AlGaN/GaN HEMTs, such as current collapse (power slump), the self-heating effect and the power scaling problem. In this paper, we have studied the self-heating effect using pulsed current-voltage (IV) and current-voltage-temperature (IVT) measurement under 'the same dc bias power condition'- the isothermal condition. It was shown how self-heating affects the AlGaN/GaN HEMT's operation. It can be thought that a reason for the power slump problem of the GaN-based HEMT using a sapphire substrate and the power scaling difficulty is a thermal problem caused by the self-heating effect.
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