Deep level related to a two-dimensional electron gas region in Al xGa 1-xN/GaN heterointerfaces
- Authors
- Jeon, HeeChang; Park, Chanjin; Cho, Hoonyoung; Kang, Taewon Wang; Kim, Taewhan; Oh, Jae-eung; Na, Jong-ho
- Issue Date
- Nov-2005
- Publisher
- 한국물리학회
- Keywords
- AlGaN/GaN; Deep level; Two-dimensional electron gas
- Citation
- Journal of the Korean Physical Society, v.47, no.SUPPL. 3, pp S489 - S492
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 47
- Number
- SUPPL. 3
- Start Page
- S489
- End Page
- S492
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46452
- ISSN
- 0374-4884
1976-8524
- Abstract
- Deep-level transient spectroscopy (DLTS) measurements were performed on Al xGa 1-xN/GaN heterostructures grown by using molecular beam epitaxy. The DLTS results show two deep levels, J 1 and J 2. The J 1 peak is attributed to an electron trap related to a dislocation in a two-dimensional electron gas region at the Al xGa 1-xN/GaN heterointerface and has an activation energy of E c - 0.20 eV and a capture cross section of 4.4 × 10 -20 cm -2. The J 2 peak is related to the point defect. These results provide important information on the electronic properties for improving the fabrication efficiencies of Al xGa 1-xN/GaN heterostructure-based high-electron-mobility transistors.
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