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InAs/InGaAs quantum dot Mach-Zehnder modulator at 1.55 μm
- Authors
- Seong, Hae ok; Young, Tae byun; Chang, Wan son; Yon, Tae moon; Young, Wan choi; Jae, Eung oh; Seungho, L.ee; Young, M.J.; Deok, H.W.; Seok, L.; Sun, H.K.
- Issue Date
- 2005
- Publisher
- IEEE
- Citation
- Conference on Lasers and Electro-Optics Europe - Technical Digest
- Indexed
- OTHER
- Journal Title
- Conference on Lasers and Electro-Optics Europe - Technical Digest
- Abstract
- In this paper, we have fabricated EO modulators using InAs/lnGaAs columnar QDs, and measured the modulation characteristics. The switching voltage is about 6.1 V and the modulation efficiencies of QD EO modulators are higher than those of bulk modulators at 1.55 /spl mu/m.
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