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InAs/InGaAs quantum dot Mach-Zehnder modulator at 1.55 μm

Authors
Seong, Hae okYoung, Tae byunChang, Wan sonYon, Tae moonYoung, Wan choiJae, Eung ohSeungho, L.eeYoung, M.J.Deok, H.W.Seok, L.Sun, H.K.
Issue Date
Dec-2004
Publisher
IEEE
Citation
Conference on Lasers and Electro-Optics Europe - Technical Digest
Indexed
OTHER
Journal Title
Conference on Lasers and Electro-Optics Europe - Technical Digest
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46463
DOI
10.1109/CLEOE.2005.1568112
Abstract
In this paper, we have fabricated EO modulators using InAs/lnGaAs columnar QDs, and measured the modulation characteristics. The switching voltage is about 6.1 V and the modulation efficiencies of QD EO modulators are higher than those of bulk modulators at 1.55 /spl mu/m.
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COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 1. Journal Articles

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