A study of process parameter control for nanopattern
- Authors
- Kim, Sang-Kon; OH, HYE KEUN
- Issue Date
- Dec-2004
- Publisher
- 한국물리학회
- Keywords
- lithography; lithography simulation; chemically amplified resist; mask error enhancement factor; optical proximity correction
- Citation
- Journal of the Korean Physical Society, v.45, no.S(suppl.), pp S736 - S739
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 45
- Number
- S(suppl.)
- Start Page
- S736
- End Page
- S739
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46531
- ISSN
- 0374-4884
1976-8524
- Abstract
- As lithography technology pushes to the nanoline dimensions, even less drastic changes during photoresist processes can have a non-negligible impact on proximity behavior; thus, these changes can affect the optical proximity correction rules and models. In this study, after the descriptions of the whole-process parameters, the impact on proximity behavior is described and analyzed by using the quantitative sensitivity of these parameters on the critical dimension. Our lithography simulator shows similar behavior to a commercial tool in the critical dimension variation of each tool due to process parameters. By using this benchmark home-made lithography simulator and response surface methodology, the most dominant response parameters of each process in terms of critical dimension and side-wall angle are found to be numerical aperture of the projection lens system and time for the soft-bake process. The most effective process for the 193-nm chemically amplified resist is found to be the post-expose bake process for critical dimension and side-wall angle. Although the prediction errors are less than 10% of the pattern size by using the threshold-energy resist model, the effect on optical proximity correction rules and the characterization of the mask error enhancement factor can be easily controlled to below 5% of pattern size by using these dominant process parameters.
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Collections - COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF APPLIED PHYSICS > 1. Journal Articles
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