Impact of in situ NH3 preannealing on sub-100 nm tungsten polymetal gate electrode during the sealing nitride formation
DC Field | Value | Language |
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dc.contributor.author | Lim, Kwan Yong | - |
dc.contributor.author | Lee, Jung ho | - |
dc.contributor.author | Cho, Heung Jae | - |
dc.contributor.author | Oh, Jae geun | - |
dc.contributor.author | Hong, Byung seop | - |
dc.contributor.author | Jang, Se aug | - |
dc.contributor.author | Kim, Yong soo | - |
dc.contributor.author | Yang, Hong seon | - |
dc.contributor.author | Sohn, Hyun chul | - |
dc.date.accessioned | 2021-06-24T00:40:42Z | - |
dc.date.available | 2021-06-24T00:40:42Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2004-04 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46604 | - |
dc.description.abstract | We investigated the effects of in situ NH3 preannealing immediately before sealing nitride deposition on the wordline sheet resistance (R-s) of a tungsten polymetal gate electrode (W/WNx/poly-Si). While in situ NH3 preannealing is very effective for the suppression of W-O whisker formation, it was found that excessively long-time NH3 preannealing could cause an unexpectedly abnormal increase in the wordline R, of short gate length electrodes, typically < 100 nm. Since X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS) analyses reveal that long-time NH3 preannealing results in the nitridation of tungsten sidewall surfaces. the wordline R-s increase in a small-gate-length sample subjected to Iong-time NH3 preannealing is mainly due to tungsten sidewall nitridation, which is localized at the surface region of the tungsten sidewall. In addition, at a Iona-time NH(3-)preannealed gate electrode, an abnormal inflation of the tungsten sidewall occurred due to a slight increment in lattice spacing by tungsten nitridation. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP Publishing Ltd | - |
dc.title | Impact of in situ NH3 preannealing on sub-100 nm tungsten polymetal gate electrode during the sealing nitride formation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Jung ho | - |
dc.identifier.doi | 10.1143/JJAP.43.1829 | - |
dc.identifier.scopusid | 2-s2.0-3142566942 | - |
dc.identifier.wosid | 000221510800035 | - |
dc.identifier.bibliographicCitation | Japanese Journal of Applied Physics, v.43, no.4B, pp.1829 - 1832 | - |
dc.relation.isPartOf | Japanese Journal of Applied Physics | - |
dc.citation.title | Japanese Journal of Applied Physics | - |
dc.citation.volume | 43 | - |
dc.citation.number | 4B | - |
dc.citation.startPage | 1829 | - |
dc.citation.endPage | 1832 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | tungsten polymetal gate | - |
dc.subject.keywordAuthor | W/WNx/poly-Si | - |
dc.subject.keywordAuthor | NH3 anneal | - |
dc.subject.keywordAuthor | sheet resistance | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.43.1829 | - |
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