Impact of in situ NH3 preannealing on sub-100 nm tungsten polymetal gate electrode during the sealing nitride formation
- Authors
- Lim, Kwan Yong; Lee, Jung ho; Cho, Heung Jae; Oh, Jae geun; Hong, Byung seop; Jang, Se aug; Kim, Yong soo; Yang, Hong seon; Sohn, Hyun chul
- Issue Date
- Apr-2004
- Publisher
- IOP Publishing Ltd
- Keywords
- tungsten polymetal gate; W/WNx/poly-Si; NH3 anneal; sheet resistance
- Citation
- Japanese Journal of Applied Physics, v.43, no.4B, pp.1829 - 1832
- Indexed
- SCIE
SCOPUS
- Journal Title
- Japanese Journal of Applied Physics
- Volume
- 43
- Number
- 4B
- Start Page
- 1829
- End Page
- 1832
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46604
- DOI
- 10.1143/JJAP.43.1829
- ISSN
- 0021-4922
- Abstract
- We investigated the effects of in situ NH3 preannealing immediately before sealing nitride deposition on the wordline sheet resistance (R-s) of a tungsten polymetal gate electrode (W/WNx/poly-Si). While in situ NH3 preannealing is very effective for the suppression of W-O whisker formation, it was found that excessively long-time NH3 preannealing could cause an unexpectedly abnormal increase in the wordline R, of short gate length electrodes, typically < 100 nm. Since X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS) analyses reveal that long-time NH3 preannealing results in the nitridation of tungsten sidewall surfaces. the wordline R-s increase in a small-gate-length sample subjected to Iong-time NH3 preannealing is mainly due to tungsten sidewall nitridation, which is localized at the surface region of the tungsten sidewall. In addition, at a Iona-time NH(3-)preannealed gate electrode, an abnormal inflation of the tungsten sidewall occurred due to a slight increment in lattice spacing by tungsten nitridation.
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