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Transport measurement through stacked InAs self-assembled quantum dots in time domain

Authors
Jun, MSJeong, DYOh, JEHwang, SWAhn, D
Issue Date
Mar-2004
Publisher
ELSEVIER SCIENCE BV
Keywords
self-assembled quantum dot; electrical pulse; time domain
Citation
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.21, no.2-4, pp.460 - 463
Indexed
SCIE
SCOPUS
Journal Title
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume
21
Number
2-4
Start Page
460
End Page
463
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46610
DOI
10.1016/j.physe.2003.11.052
ISSN
1386-9477
Abstract
We report electronic characterization of stacked InAs self-assembled quantum dots (SAQDs) embedded in GaAs, using ultra-short pulses. Electrical pulse trains with the width ranging from 50 to 500 ps were applied on the waveguide-type top electrode and the average substrate current was monitored. The current showed staircases and oscillatory features as a function of the pulse width. The staircase could represent single electron injection into SAQDs and the observed oscillatory features could be related with temporal change of electronic occupation in quantum states of SAQDs. (C) 2003 Elsevier B.V. All rights reserved.
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COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 1. Journal Articles

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