Charge retention loss and its mechanism of (Bi,La)(4)Ti3O12 capacitors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, DJ | - |
dc.contributor.author | Jo, JY | - |
dc.contributor.author | So, YW | - |
dc.contributor.author | Kang, BS | - |
dc.contributor.author | Noh, TW | - |
dc.contributor.author | Yoon, JG | - |
dc.contributor.author | Song, TK | - |
dc.contributor.author | Noh, KH | - |
dc.contributor.author | Lee, SS | - |
dc.contributor.author | Oh, SH | - |
dc.contributor.author | Hong, SK | - |
dc.contributor.author | Park, YJ | - |
dc.date.accessioned | 2021-06-24T00:41:56Z | - |
dc.date.available | 2021-06-24T00:41:56Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2004 | - |
dc.identifier.issn | 1058-4587 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46640 | - |
dc.description.abstract | We investigated the retention properties of BLT capacitors fabricated by a chemical solution deposition with Pt electrodes. BLT capacitors showed an opposite-state retention loss much better than that of PZT capacitor. On the other hand, BLT capacitors showed a large polarization loss of the same-state retention within I hour baking, while the corresponding loss of PZT was negligible. The hysteresis loops after different baking time showed a negligible imprint and a large relaxation of polarization. These behaviors were explained by a high resistance against imprint and a polarization relaxation possibly due to damaged interfacial layers developed by etching process of the BLT capacitors. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | TAYLOR & FRANCIS LTD | - |
dc.title | Charge retention loss and its mechanism of (Bi,La)(4)Ti3O12 capacitors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kang, BS | - |
dc.identifier.doi | 10.1080/10584580490898542 | - |
dc.identifier.wosid | 000226089900011 | - |
dc.identifier.bibliographicCitation | INTEGRATED FERROELECTRICS, v.67, pp.85 - 91 | - |
dc.relation.isPartOf | INTEGRATED FERROELECTRICS | - |
dc.citation.title | INTEGRATED FERROELECTRICS | - |
dc.citation.volume | 67 | - |
dc.citation.startPage | 85 | - |
dc.citation.endPage | 91 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | ferroelectric | - |
dc.subject.keywordAuthor | BLT | - |
dc.subject.keywordAuthor | retention | - |
dc.subject.keywordAuthor | imprint | - |
dc.subject.keywordAuthor | polarization relaxation | - |
dc.identifier.url | https://www.tandfonline.com/doi/full/10.1080/10584580490898542 | - |
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