Analog characterization of low-voltage MQW traveling-wave electroabsorption modulators
- Authors
- Liu, Bin; Shim, Jong In; Chiu, Yi-Jen; Keating, Adrian; Piprek, Joachim; Bowers, John Edward
- Issue Date
- Dec-2003
- Publisher
- Optical Society of America
- Keywords
- analog optical link; electroabsorption modulator (EAM); link gain; multiple quantum wells (MQWs); spurious-free dynamic range (SFDR); traveling wave (TW)
- Citation
- Journal of Lightwave Technology, v.21, no.12, pp.3011 - 3019
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Lightwave Technology
- Volume
- 21
- Number
- 12
- Start Page
- 3011
- End Page
- 3019
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46647
- DOI
- 10.1109/JLT.2003.819799
- ISSN
- 0733-8724
- Abstract
- In this paper, high-speed traveling-wave electroabsorption modulators (TW-EAMs) with strain-compensated InGaAsP multiple quantum wells as the absorption region for analog optical links have been developed. A record-high slope efficiency of 4/V, which. is equivalent to a Mach-Zehnder modulator with a V-pi of 0.37 V and a high extinction ratio of > 30 dB/V have been measured. A detailed study of the nonlinearity and the spurious-free dynamic range (SFDR) is presented. By optimizing the bias voltage and the input optical power, the SFDR can be improved by 10-30 dB. After minimizing the third-order distortion, an SFDR as high as 128 dB - HZ(4/5) is achieved at 10 GHz. A simple link measurement was made using this EAM and an erbium-doped fiber amplifier and a 50-Omega terminated photodetector. At 10 GHz, a link gain of 1 dB is achieved at a detected photocurrent of 7.6 mA with higher gains at lower frequencies. The dependence of link gains on bias voltage, input optical, and radio frequency powers are investigated in detail.
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