Simulation parameter extraction using distribution processing and fast SEM profile digitization

Abstract

We introduce a new method of extracting lithography process parameters related to exposure, post exposure bake (PEB), and development during a full lithography process. A presently well-known method, cross-sectional critical shape error (CCSE), is used to correct profile differences by comparing directly the simulation profile to the SEM profile. In this paper, a fast SEM profile digitization method will be presented to enhance the computing process speed when extracting CCSE error values. Additionally, we apply our own lithography process simulator, LUV (lithography for ultraviolet) to a distributed processing that allows us to shorten the simulation time over the exposure, the PEB, and the development processes.