Simulation parameter extraction using distribution processing and fast SEM profile digitization
- Authors
- Park,Jun-Taek; Sohn, Dong-Soo; Oh, Hye-Keun
- Issue Date
- Nov-2003
- Publisher
- 한국물리학회
- Keywords
- lithography; simulation; nano device; optical proximity correction; parameter extraction; CCSE; resist process; distributed processing
- Citation
- Journal of the Korean Physical Society, v.43, no.5, pp 836 - 840
- Pages
- 5
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 43
- Number
- 5
- Start Page
- 836
- End Page
- 840
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46652
- DOI
- 10.3938/jkps.43.836
- ISSN
- 0374-4884
1976-8524
- Abstract
- We introduce a new method of extracting lithography process parameters related to exposure, post exposure bake (PEB), and development during a full lithography process. A presently well-known method, cross-sectional critical shape error (CCSE), is used to correct profile differences by comparing directly the simulation profile to the SEM profile. In this paper, a fast SEM profile digitization method will be presented to enhance the computing process speed when extracting CCSE error values. Additionally, we apply our own lithography process simulator, LUV (lithography for ultraviolet) to a distributed processing that allows us to shorten the simulation time over the exposure, the PEB, and the development processes.
- Files in This Item
-
Go to Link
- Appears in
Collections - COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF APPLIED PHYSICS > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46652)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.