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Optical properties related to a two-dimensional electron gas at an AlGaN/GaN heterostructure
- Issue Date
- Nov-2003
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- AlGaN/GaN; photoluminescence; 2-dimensional electron gases
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.43, no.5 pt.1, pp 743 - 746
- Pages
- 4
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 43
- Number
- 5 pt.1
- Start Page
- 743
- End Page
- 746
- ISSN
- 0374-4884
1976-8524
- Abstract
- We report photoluminescence (PL) spectra related to a two-dimensional electron gas (2DEG) confined at an AlGaN/GaN heterointerface. The 2DEG related the PL has been identified by measuring PL of the structure as functions of the light intensity and the temperature and by comparing the results with those obtained for GaN exposed via etching. The PL peak related to recombination between the two-dimensional electron gas and photoexcited holes is located at 3.436 eV at 15 K, which is 28 meV below the bound exciton (DOX) emission in GaN. The activation energy is about 10.8 meV.
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