Threshold energy resist model for critical dimension prediction

Abstract

The threshold energy resist model based on the aerial image is less time consuming and sometimes more efficient than the full simulation model based on mathematical analysis of the whole complicated photolithography process. Moreover, this model still contains a disadvantage that its prediction is limited in various situations. In this paper, we report the new threshold resist model to predict the critical dimension (CD) on the wafer is presented. This model has a functional form that is consisted of the aerial image intensity and its slope. The contours of a resist pattern are determined from the aerial image contours of the process matched by using a functional form. High prediction accuracy in various patterns with respect to pattern sizes is obtained by using the new model.