Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Resist pattern collapse with top rounding resist profile
- Issue Date
- Jun-2003
- Publisher
- IOP Publishing Ltd
- Keywords
- resist; lithography; pattern; collapse; deformation; contact angle; surface tension; aspect ratio; top rounding; rounded top; Young's modulus; line width
- Citation
- Japanese Journal of Applied Physics, v.42, no.6B, pp 3922 - 3927
- Pages
- 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- Japanese Journal of Applied Physics
- Volume
- 42
- Number
- 6B
- Start Page
- 3922
- End Page
- 3927
- ISSN
- 0021-4922
1347-4065
- Abstract
- The pattern size is reduced as the device is more integrated. The resist deformation phenomenon has been a serious problem under 100 nm line width patterns. The most applicable model for an existing empirical result is chosen to create a simulation tool by comparing the two mechanical models when a pattern receives a distributed pressure or a concentrated pressure from the rinse liquid. Based on the chosen model, the critical aspect ratio with respect to line width and space can be calculated. The simulated results show that the pattern collapse phenomenon is reduced for a rounded top resist profile rather than for a flat top profile.
- Files in This Item
- Go to Link
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.