Resist pattern collapse modeling for smaller features
- Authors
- Lee, Hyung-Joo; Park, Jun-Taek; Yoo, Ji-Yong; AN, IL SIN; OH, HYE KEUN
- Issue Date
- Feb-2003
- Publisher
- 한국물리학회
- Keywords
- structural modeling; serial-addition models; computer simulation
- Citation
- Journal of the Korean Physical Society, v.42, no.SPEC, pp S202 - S206
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 42
- Number
- SPEC
- Start Page
- S202
- End Page
- S206
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46722
- ISSN
- 0374-4884
1976-8524
- Abstract
- The pattern size is reduced as the device becomes more integrated. The resist deformation phenomenon has been a serious problem under 100 nm line width pattern. In this study. a simulation tool for pattern collapse is created by using the, existing beam sway model, and the effects of resist profile that affect pattern collapse have been studied, The distortion rate and collapse condition of patterns that are identical to the experimental data have been confirmed by simulation results with respect to surface tension of rinse liquid. contact angle of the rinse liquid at the resist surface, Young's modulus of the resist. pattern height, length of line and space, and aspect ratio.
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Collections - COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF APPLIED PHYSICS > 1. Journal Articles
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 1. Journal Articles
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