A practical method of extracting the photoresist exposure parameters by using a dose-to-clear swing curve

Abstract

Dill exposure ABC parameters play an important role in photolithography simulation. However, Dill parameters of chemically amplified resist are not easily determined. The case of chemically amplified resist is different from that of novolak resin photoresist, since the transmission and thickness of chemically amplified resist are not changed very much during, exposure. The exact refractive index and the absorption rate of photoresist are needed in order to extract Dill parameters (hiring exposure in all ordinary method. However, it is not case, to get these in it device milk. research lab. We suggest an easier and simpler Dill parameter extraction method by using it dose-to-clear swing curve of the photoresist, which is easily measured in a lab. The relation between Dill parameters and dose-to-clear swing curve is studied by simulation Dill exposure ABC parameters are obtained by matching the dose-to-clear swing curve of the experiment data with that of the simulation results. As a result of the simulation, Dill exposure ABC parametors of 193 nm chemically amplified resist are determined. lit contrast to the presented methods, no exceptional experimental equipment or complex tools are used to get Dill exposure ABC parameters.