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Sensitivity of simulation parameter for critical dimension
- Issue Date
- Jun-2002
- Publisher
- IOP Publishing Ltd
- Keywords
- lithography; critical dimension; optimization; simulation parameters; response surface methodology
- Citation
- Japanese Journal of Applied Physics, v.41, no.6B, pp 4222 - 4227
- Pages
- 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- Japanese Journal of Applied Physics
- Volume
- 41
- Number
- 6B
- Start Page
- 4222
- End Page
- 4227
- ISSN
- 0021-4922
1347-4065
- Abstract
- In this study, lithography processes were modeled and simulated for the optimized parameters of 365 nm, 248 nm, and 193 nm resists. Also, sensitivity of those parameters for the critical dimension (CD) and side wall angle of simulated Profile,, Was analyzed using the response surface methodology (RSM). Through the quantization of sensitivity of these easy-to-optimize simulation parameters, we quantified lithography processes and discussed the different phenomenon of the chemically amplified resist (CAR) compared to the non-CAR. To validate our results, the quantitative comparison between our results and those of a commercial tool was shown.
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