Analysis of the relation between exposure parameters and critical dimension by response surface model

Abstract

It is important to know the relationship between the soft bake conditions and the Dill exposure parameters in order to control the lithographic process well. It has been reported that exposure parameter A can be significantly affected by the soft bake conditions, while the exposure parameters B and C show no dependency on the soft bake conditions. The exposure parameters have been considered less important in 193 nm chemically amplified resist (CAR) simulation. Since the critical dimension variation depends on the exposure parameters, if we know the relationship between them it would be helpful in developing resist and resist process.'In this paper the profiles of a 193 nm CAR were simulated with the various Dill exposure parameters and the results were analyzed by response surface model. The response surface methodology (RSM) approach was used to analyze the influence of independent factors on a dependent response, and to optimize each process. A method of steepest ascent was utilized to produce first-order models, which were verified by lack of fit testing. As optimum operation points were approached, a second-order model was fitted and analyzed. The Dill exposure parameter C affects critical dimension greatly whereas A and B have much less effect. Among parameters other than exposure parameters, PEB time and PEB temperature are great factors to affect critical dimension. Even small change of them can make great critical dimension changes. Process optimization for the target response value as well as process latitude was possible through the use of the response surface.