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Cathodoluminescence characterization of GaN thick films grown by using the HVPE method
- Authors
- Kim, Hwa-Mok; Choi, Jun-Sung; Oh, Jae-Eung; Yoo, Tae-Kyung
- Issue Date
- Dec-2000
- Publisher
- 한국물리학회
- Citation
- Journal of the Korean Physical Society, v.37, no.6, pp 956 - 960
- Pages
- 5
- Indexed
- SCIE
SCOPUS
KCICANDI
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 37
- Number
- 6
- Start Page
- 956
- End Page
- 960
- ISSN
- 0374-4884
1976-8524
- Abstract
- Thick (> 200 mum) GaN films grown by hydride vapor-phase epitaxy (HVPE) were examined. High-quality films were examined by field emission scanning electron microscopy (FE-SEM), cathodoluminescence (CL) spectroscopy, and imaging. We carried out spatially resolved studies of film cross-sections and the interface side of the GaN films/sapphire as well as the top surfaces. The top surfaces of the films showed narrow band-edge emission lines while the cathodoluminescence spectra near the interface were broad and extended to energies above the band gap. Close to the interface, we were able to directly observe a region, about 20-mum thick, containing columnar structures.
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