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New technique for the thermal resistance measurement of power field effect transistors using cathodoluminescence
- Authors
- Kim, Hwa mok; Yoon, Jin sik; Lee, Seung ho; Oh, Jae eung; Lee, Won sang; Chun, Kye ik; Chung, Ki woong; Chung, Hae won; Kang, Tae won
- Issue Date
- Nov-2000
- Publisher
- INST PURE APPLIED PHYSICS
- Keywords
- power FET; thermal resistance; high spatial resolution; low-energy electron-beam; cathodoluminescence; reliability
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.39, no.11A, pp.L1087 - L1089
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
- Volume
- 39
- Number
- 11A
- Start Page
- L1087
- End Page
- L1089
- ISSN
- 0021-4922
- Abstract
- A new approach for measuring the thermal resistance of power field-effect transistors (FETs) with extremely high spatial resolution below 40 nm has been demonstrated using cathodoluminescence generated by a low-energy electron beam. The energy shift of the fundamental bandgap caused by the current heating in the channel region is spatially probed, and is converted to the channel temperature using the temperature dependence of the material bandgap. The obtained thermal resistances of the GaAs metal semiconductor field effect transistor (MESFET) and the GaN MESFET are compared with those measured by the conventional electrical technique.
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