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Temperature rising effect of 193 nm chemically amplified resist during post exposure bake

Authors
Lee, Young-MiSung, Moon-GyuLee, Eun-MiSohn, Young-SooBak, Heung-JinOh, Hye-Keun
Issue Date
Mar-2000
Publisher
Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States
Citation
Proceedings of SPIE - The International Society for Optical Engineering, v.3999, pp 1000 - 1008
Pages
9
Indexed
SCOPUS
Journal Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
3999
Start Page
1000
End Page
1008
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46976
ISSN
0277-786X
Abstract
The deprotection of chemically amplified resist is amplified by photogenerated acid during post exposure bake. The deprotection rate is mainly dependent on bake temperature and time. It has been assumed that the temperature of wafer surface and photoresist is to be raised instantaneously up to desired set temperature, but in real world it can not happen. We investigated the temperature change of wafer surface on a hot plate and obtained effective post exposure bake time. We applied the effective post exposure bake time to our simulation tool and the simulation results showed a better agreement with the experimental resist profile.
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF APPLIED PHYSICS > 1. Journal Articles

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