Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Temperature rising effect of 193 nm chemically amplified resist during post exposure bake
- Issue Date
- Mar-2000
- Publisher
- Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States
- Citation
- Proceedings of SPIE - The International Society for Optical Engineering, v.3999, pp 1000 - 1008
- Pages
- 9
- Indexed
- SCOPUS
- Journal Title
- Proceedings of SPIE - The International Society for Optical Engineering
- Volume
- 3999
- Start Page
- 1000
- End Page
- 1008
- ISSN
- 0277-786X
- Abstract
- The deprotection of chemically amplified resist is amplified by photogenerated acid during post exposure bake. The deprotection rate is mainly dependent on bake temperature and time. It has been assumed that the temperature of wafer surface and photoresist is to be raised instantaneously up to desired set temperature, but in real world it can not happen. We investigated the temperature change of wafer surface on a hot plate and obtained effective post exposure bake time. We applied the effective post exposure bake time to our simulation tool and the simulation results showed a better agreement with the experimental resist profile.
- Files in This Item
- Go to Link
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.