Bistability properties of AlGaAs/GaAs modulation-doped field effect transistors with embedded InAs quantum dots

Abstract

We have investigated the electrical characteristics of A1GaAs/GaAs modulation doped field effect transistors in which five stacks of self-organized InAs quantum dots are inserted into GaAs channel. Pi-stable behaviors and hysteresis in the transistor output and transfer characteristics are observed at room temperature and 77 K, implying that the proposed device can be used to realize a new class of devices such as memory elements. This observed characteristics in A1GaAs/GaAs QD transistors are attached to the charge transfer from QD layers to the channel layer through a thin GaAs barrier, which is probably assisted by the channel field, and the potential changed by trapped and discharged electrons in QDs which affect the threshold voltage characteristics.