OPTICAL CHARACTERIZATION OF COHERENTLY STRAINED SHORT-PERIOD SUPERLATTICE (INAS)N(ALAS)N GROWN BY MOLECULAR-BEAM EPITAXY
- Authors
- WOO, DH; KIM, DW; LEEM, YA; WOO, JC; OH, JE; HSU, TM
- Issue Date
- Apr-1992
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- SURFACE SCIENCE, v.267, no.1-3, pp.114 - 119
- Indexed
- SCIE
SCOPUS
- Journal Title
- SURFACE SCIENCE
- Volume
- 267
- Number
- 1-3
- Start Page
- 114
- End Page
- 119
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/47078
- DOI
- 10.1016/0039-6028(92)91102-H
- ISSN
- 0039-6028
- Abstract
- Ultra-thin superlattices (UTSL's) (InAs)n(AlAs)n for n = 1, 2, 3, and 4 have been grown by molecular beam epitaxy in order to obtain the artificial construction of a perfect layered alloy. The optimum MBE growth condition of InAs and AlAs monolayers was obtained through the calibration of RHEED intensity oscillations. It was found that a strong oscillation of the specular beam intensity during the growth of InAs can be successfully obtained only in the narrow temperature region between 450 and 480-degrees-C. The structural property of the UTSL's was investigated by X-ray diffraction, complemented by Raman scattering measurement. Coherently strained superlattices were kept up to n = 3, while in the case of (InAs)4(AlAs)4 UTSL superlattices are rather intermixed due to the large excess strain energy. Unlike the (AlAs)n(GaAs)n, the photoluminescence peak energy reaches maximum when n = 2, at the energy of about 50 meV below the fundamental gap of In0.5Al0.5As. This is the first experimental observation that gives a corresponding result with the tight-binding calculation on the subband of the strained (InAs)n(AlAs)n UTSL's.
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