Enhanced PbS quantum dot loading on TiO2 photoanode using atomic-layer-deposited ZnS interfacial layer for quantum dot-sensitized solar cells
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Basit, Muhammad Abdul | - |
dc.contributor.author | Abbas, Muhammad Awais | - |
dc.contributor.author | Jung, Eun Sun | - |
dc.contributor.author | Ali, Ijaz | - |
dc.contributor.author | Kim, Dae Woong | - |
dc.contributor.author | Bang, Jin Ho | - |
dc.contributor.author | Park, Tae Joo | - |
dc.date.accessioned | 2021-06-22T11:03:22Z | - |
dc.date.available | 2021-06-22T11:03:22Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2018-12 | - |
dc.identifier.issn | 0254-0584 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/4723 | - |
dc.description.abstract | Ultrathin and conformal ZnS film grown by atomic layer deposition was employed in quantum dot-sensitized solar cells (QDSSCs) as an interfacial layer (IL) between mesoporous TiO2 photoanode and successive ionic layer adsorption and reaction (SILAR)-grown PbS QDs. ZnS IL provided more nucleation sites compared to a bare TiO2 photoanode, which enhanced PbS QDs loading remarkably. As a result, the optical absorbance and thus photocurrent density considerably increased. The power conversion efficiency of QDSSCs increased from 3.4% to 4% by introducing the ZnS IL. However, the beta-recombination model obtained from electrochemical impedance spectroscopy revealed the evolution of charge carrier recombination inside QDs as a consequence of enhanced QD loading, which partly dilutes this benefit. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Elsevier BV | - |
dc.title | Enhanced PbS quantum dot loading on TiO2 photoanode using atomic-layer-deposited ZnS interfacial layer for quantum dot-sensitized solar cells | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Bang, Jin Ho | - |
dc.contributor.affiliatedAuthor | Park, Tae Joo | - |
dc.identifier.doi | 10.1016/j.matchemphys.2018.09.006 | - |
dc.identifier.scopusid | 2-s2.0-85053508458 | - |
dc.identifier.wosid | 000450020000032 | - |
dc.identifier.bibliographicCitation | Materials Chemistry and Physics, v.220, pp.293 - 298 | - |
dc.relation.isPartOf | Materials Chemistry and Physics | - |
dc.citation.title | Materials Chemistry and Physics | - |
dc.citation.volume | 220 | - |
dc.citation.startPage | 293 | - |
dc.citation.endPage | 298 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | RECOMBINATION | - |
dc.subject.keywordPlus | PHOTOELECTRODE | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordAuthor | QDSSCs | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Zinc sulfide | - |
dc.subject.keywordAuthor | Interfacial layer | - |
dc.subject.keywordAuthor | Quantum dots loading | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0254058418307570?via%3Dihub | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.