Effects of Ar Addition to O-2 Plasma on Plasma-Enhanced Atomic Layer Deposition of Oxide Thin Films
DC Field | Value | Language |
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dc.contributor.author | Jung, Hanearl | - |
dc.contributor.author | Oh, Il-Kwon | - |
dc.contributor.author | Yoon, Chang Mo | - |
dc.contributor.author | Park, Bo-Eun | - |
dc.contributor.author | Lee, Sanghun | - |
dc.contributor.author | Kwon, Ohyung | - |
dc.contributor.author | Lee, Woo Jae | - |
dc.contributor.author | Kwon, Se-Hun | - |
dc.contributor.author | Kim, Woo-Hee | - |
dc.contributor.author | Kim, Hyungjun | - |
dc.date.accessioned | 2021-06-22T11:21:32Z | - |
dc.date.available | 2021-06-22T11:21:32Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2018-11 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/5108 | - |
dc.description.abstract | A method for significantly increasing the growth rates (GRs) of high-k oxide thin films grown via plasma enhanced atomic layer deposition (PE-ALD) by enhancing the plasma density through the addition of Ar gas to the O-2 plasma oxidant was developed. This approach led to improvements of, similar to 60% in the saturation GRs of PE-ALD ZrO2, HfO2, and SiO2. Furthermore, despite the significantly higher GR enabled by PE-ALD, the mechanical and dielectric properties of the PE-ALD oxide films were similar or even superior to those of films grown via the conventional O-2 plasma process. Optical emission spectroscopy analyses in conjunction with theoretical calculation of the electron energy distribution function revealed that adding Ar gas to the O-2 plasma increased the density of high-energy electrons, thereby generating more O-2 plasma species, such as ions and radicals, which played a key role in improving the GRs and the properties of the films. This promising approach is expected to facilitate the high-volume manufacturing of films via PE-ALD, especially for use as gate insulators in thin-film transistor-based devices in the display industry. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | American Chemical Society | - |
dc.title | Effects of Ar Addition to O-2 Plasma on Plasma-Enhanced Atomic Layer Deposition of Oxide Thin Films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Woo-Hee | - |
dc.identifier.doi | 10.1021/acsami.8b14244 | - |
dc.identifier.scopusid | 2-s2.0-85056470020 | - |
dc.identifier.wosid | 000451496000096 | - |
dc.identifier.bibliographicCitation | ACS Applied Materials and Interfaces, v.10, no.46, pp.40286 - 40293 | - |
dc.relation.isPartOf | ACS Applied Materials and Interfaces | - |
dc.citation.title | ACS Applied Materials and Interfaces | - |
dc.citation.volume | 10 | - |
dc.citation.number | 46 | - |
dc.citation.startPage | 40286 | - |
dc.citation.endPage | 40293 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | GROWTH-CHARACTERISTICS | - |
dc.subject.keywordPlus | ELASTIC-MODULUS | - |
dc.subject.keywordPlus | INDENTATION | - |
dc.subject.keywordPlus | HARDNESS | - |
dc.subject.keywordPlus | AR/O-2 | - |
dc.subject.keywordPlus | ZRO2 | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | O-2/Ar plasma | - |
dc.subject.keywordAuthor | oxide thin films | - |
dc.subject.keywordAuthor | enhanced growth rates | - |
dc.subject.keywordAuthor | high-energy electron temperature | - |
dc.subject.keywordAuthor | increased plasma density | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.8b14244 | - |
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