Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrateopen access
- Authors
- Lee, Moonsang; Lee, Hyunkyu; Song, Keun Man; Kim, Jaekyun
- Issue Date
- Jul-2018
- Publisher
- MDPI
- Keywords
- InGaN/GaN LED; freestanding GaN; forward leakage current; conduction mechanism; tunneling
- Citation
- Nanomaterials, v.8, no.7, pp.1 - 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- Nanomaterials
- Volume
- 8
- Number
- 7
- Start Page
- 1
- End Page
- 7
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/5802
- DOI
- 10.3390/nano8070543
- ISSN
- 2079-4991
- Abstract
- We report forward tunneling characteristics of InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN detached from a Si substrate using temperature-dependent current voltage (T-I-V) measurements. T-I-V analysis revealed that the conduction mechanism of InGaN/GaN LEDs using the homoepitaxial substrate can be distinguished by tunneling, diffusion and recombination current, and series resistance regimes. Their improved crystal quality, inherited from the nature of homoepitaxy, resulted in suppression of forward leakage current. It was also found that the tunneling via heavy holes in InGaN/GaN LEDs using the homoepitaxial substrate can be the main transport mechanism under low forward bias, consequentially leading to the improved forward leakage current characteristics.
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Collections - COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 1. Journal Articles
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