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A study on degradation mechanism of flexible a-InGaZnO thin film transistor under repetitive bending stress using simulation
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오새룬터 | - |
| dc.date.accessioned | 2021-06-22T11:44:51Z | - |
| dc.date.available | 2021-06-22T11:44:51Z | - |
| dc.date.issued | 20181213 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/5940 | - |
| dc.title | A study on degradation mechanism of flexible a-InGaZnO thin film transistor under repetitive bending stress using simulation | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 25th International Display Workshops (IDW) | - |
| dc.citation.conferencePlace | Nagoya, Japan | - |
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